AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric

Published 2010 View Full Article

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Title
AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor with Liquid Phase Deposited Al[sub 2]O[sub 3] as Gate Dielectric
Authors
Keywords
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Journal
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume 157, Issue 10, Pages H947
Publisher
The Electrochemical Society
Online
2010-08-30
DOI
10.1149/1.3473782
References
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