Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs

Published 2010 View Full Article

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Title
Self-Aligned Technology for N-Polar GaN/Al(Ga)N MIS-HEMTs
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 32, Issue 1, Pages 33-35
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2010-11-19
DOI
10.1109/led.2010.2086427
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