期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 5, 页码 1393-1401出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2188634
关键词
Double-channel HEMTs (DC-HEMTs); hot-electron effect; self-heating effect; III-V semiconductors
资金
- National Natural Science Foundation of China [61006090, 10725418, 10734090, 10990104, 60811120169]
- Shanghai Science and Technology Foundation [09DJ1400203, 10JC1416100, 10510704700]
- Aviation Science Fund [20110190001]
The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are investigated by using 2-D numerical simulations. The output characteristics have been predicted with the drift-diffusion, thermodynamic, hydrodynamic, and hot-electron models, respectively. The prediction by the hydrodynamic model is in good agreement with the experiment. It is demonstrated that the hot-electron effect makes a negligible contribution to the negative differential conductance (NDC) of an AlGaN/GaN DC-HEMT; instead, the NDC effect is caused by the self-heating effect. The transfer and transconductance characteristics of an AlGaN/GaN DC-HEMT are also discussed in detail. Finally, a new In0.18Al0.82N/GaN/AlGaN/GaN DC-HEMT structure is proposed for optimizing AlGaN/GaN DC-HEMTs.
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