High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates

Published 2007 View Full Article

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Title
High-temperature enhancement mode operation of n-channel GaN MOSFETs on sapphire substrates
Authors
Keywords
-
Journal
SOLID-STATE ELECTRONICS
Volume 52, Issue 1, Pages 150-155
Publisher
Elsevier BV
Online
2007-09-19
DOI
10.1016/j.sse.2007.07.035

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