High-Quality SiO2Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas

Published 2009 View Full Article

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Title
High-Quality SiO2Film Formation below 400 °C by Plasma Enhanced Chemical Vapor Deposition Using Tetraethoxysilane Source Gas
Authors
Keywords
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Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 12, Pages 126001
Publisher
Japan Society of Applied Physics
Online
2009-12-21
DOI
10.1143/jjap.48.126001

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