Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part II: Transient Effects

Modeling Stressed MOS Oxides Using a Multiphonon-Assisted Quantum Approach—Part I: Impedance Analysis

(2012) Davide Garetto et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps

(2011) Tibor Grasser et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coulomb Energy Determination of a Single Si Dangling Bond

(2010) T. H. Nguyen et al.   PHYSICAL REVIEW LETTERS

Modeling effects of interface traps on the gate C–V characteristics of MOS devices on alternative high-mobility substrates

(2010) Md. Mahbub Satter et al.   SOLID-STATE ELECTRONICS

Exploring the Capability of Multifrequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric

(2008) Muhammad Masuduzzaman et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A General and Reliable Model for Charge Pumping—Part I: Model and Basic Charge-Pumping Mechanisms

(2008) Daniel Bauza   IEEE TRANSACTIONS ON ELECTRON DEVICES

A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $\hbox{SiO}_{2}$ or in High- $\kappa$ Gate Stacks

(2008) Daniel Bauza   IEEE TRANSACTIONS ON ELECTRON DEVICES

Probing the Carrier Capture Rate of a Single Quantum Level

(2007) M. Berthe et al.   SCIENCE