A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $\hbox{SiO}_{2}$ or in High- $\kappa$ Gate Stacks

Published 2008 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
A General and Reliable Model for Charge Pumping—Part II: Application to the Study of Traps in $\hbox{SiO}_{2}$ or in High- $\kappa$ Gate Stacks
Authors
Keywords
-
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 56, Issue 1, Pages 78-84
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2008-12-23
DOI
10.1109/ted.2008.2009024

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.