Junction and Device Characteristics of Gate-Last Ge p- and n-MOSFETs With ALD- $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Authors

Keywords

Journal

Volume 56, Issue 8, Pages 1681-1689

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Online

2009-07-16

DOI

10.1109/ted.2009.2023948

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