Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs

Title
Effects of Si-cap thickness and temperature on device performance of Si/Ge1−xCx/Si p-MOSFETs
Authors
Keywords
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Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 25, Issue 4, Pages 045005
Publisher
IOP Publishing
Online
2010-02-17
DOI
10.1088/0268-1242/25/4/045005

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