GaN-Based Submicrometer HEMTs With Lattice-Matched InAlGaN Barrier Grown by MBE

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

(2009) Haifeng Sun et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

(2009) M. Alomari et al.   IEEE ELECTRON DEVICE LETTERS

Ultrathin InAlN/AlN Barrier HEMT With High Performance in Normally Off Operation

(2009) C. Ostermaier et al.   IEEE ELECTRON DEVICE LETTERS

Gate-Recessed InAlN/GaN HEMTs on SiC Substrate With $ \hbox{Al}_{2}\hbox{O}_{3}$ Passivation

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier

(2009) A. Crespo et al.   IEEE ELECTRON DEVICE LETTERS

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

(2009) N. Sarazin et al.   IEEE ELECTRON DEVICE LETTERS

High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates

(2008) P. Waltereit et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

GaN-Based RF Power Devices and Amplifiers

(2008) U.K. Mishra et al.   PROCEEDINGS OF THE IEEE