High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates

Published 2008 View Full Article

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Title
High-efficiency GaN HEMTs on 3-inch semi-insulating SiC substrates
Authors
Keywords
-
Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 205, Issue 5, Pages 1078-1080
Publisher
Wiley
Online
2008-04-18
DOI
10.1002/pssa.200778442

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