Highly Stable Ultrathin TiO2Based Resistive Random Access Memory with Low Operation Voltage

Mechanism of Nonvolatile Resistive Switching in ZnO/α-Fe2O3 Core–Shell Heterojunction Nanorod Arrays

(2017) Debasish Sarkar et al.   Journal of Physical Chemistry C

Investigation of the Switching Mechanism in TiO2-Based RRAM: A Two-Dimensional EDX Approach

(2016) Daniela Carta et al.   ACS Applied Materials & Interfaces

Flexible resistive switching memory with a Ni/CuOx/Ni structure using an electrochemical deposition process

(2016) Kyuhyun Park et al.   NANOTECHNOLOGY

Bipolar Resistive Switching Characteristics of TaO2 RRAM

(2016) Wei-Kang Hsieh et al.   Science of Advanced Materials

Role and Optimization of the Active Oxide Layer in TiO2-Based RRAM

(2015) Anna Regoutz et al.   ADVANCED FUNCTIONAL MATERIALS

A novel method of identifying the carrier transport path in metal oxide resistive random access memory

(2015) Nianduan Lu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Understanding the gradual reset in Pt/Al2O3/Ni RRAM for synaptic applications

(2015) Biplab Sarkar et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Single CuOx Nanowire Memristor: Forming-Free Resistive Switching Behavior

(2014) Kai-De Liang et al.   ACS Applied Materials & Interfaces

Influence of oxygen content of room temperature TiO2−x deposited films for enhanced resistive switching memory performance

(2014) P. Bousoulas et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of FeOx thin films and the modulation of transport and magnetic properties by resistance switching in Au/α-Fe2O3/Pt heterostructure

(2014) C. Yun et al.   JOURNAL OF APPLIED PHYSICS

Resistive switching of oxygen enhanced TiO2 thin-film devices

(2013) Iulia Salaoru et al.   APPLIED PHYSICS LETTERS

Endurance/Retention Trade-off on $\hbox{HfO}_{2}/\hbox{Metal}$ Cap 1T1R Bipolar RRAM

(2013) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM

(2013) Mahmoud Zangeneh et al.   IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS

Bipolar resistive switching characteristics in CuO/ZnO bilayer structure

(2013) F. Yang et al.   JOURNAL OF APPLIED PHYSICS

Balancing SET/RESET Pulse for $>\hbox{10}^{10}$ Endurance in $\hbox{HfO}_{2}\hbox{/Hf}$ 1T1R Bipolar RRAM

(2012) Yang Yin Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Failure and reliability analysis of STT-MRAM

(2012) W.S. Zhao et al.   MICROELECTRONICS RELIABILITY

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells

(2011) L. Goux et al.   APPLIED PHYSICS LETTERS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

Enhancement of Resistive Switching Characteristics in $ \hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM With Embedded Ruthenium Nanocrystals

(2011) Lin Chen et al.   IEEE ELECTRON DEVICE LETTERS

Role of Interface Reaction on Resistive Switching of Metal/Amorphous TiO2/Al RRAM Devices

(2011) Hu Young Jeong et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

A study of cycling induced degradation mechanisms in Si nanocrystal memory devices

(2011) Dandan Jiang et al.   NANOTECHNOLOGY

NiO Resistive Random Access Memory Nanocapacitor Array on Graphene

(2010) Jong Yeog Son et al.   ACS Nano

Enhanced resistance switching stability of transparent ITO/TiO2/ITO sandwiches

(2010) Meng Yang et al.   Chinese Physics B

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in $\hbox{TiO}_{2}$ for Resistive Switching Memory

(2010) Seong-Geon Park et al.   IEEE ELECTRON DEVICE LETTERS

A low-temperature-grown TiO2-based device for the flexible stacked RRAM application

(2010) Hu Young Jeong et al.   NANOTECHNOLOGY

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Threshold field of phase change memory materials measured using phase change bridge devices

(2009) Daniel Krebs et al.   APPLIED PHYSICS LETTERS

Effect of ruthenium oxide electrode on the resistive switching of Nb-doped strontium titanate

(2008) Musarrat Hasan et al.   APPLIED PHYSICS LETTERS

Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

(2008) Jung Won Seo et al.   APPLIED PHYSICS LETTERS

Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing

(2008) M. Miyake et al.   JOURNAL OF APPLIED PHYSICS

Structural and electrical properties of metal–ferroelectric–insulator–semiconductor structure of Al/SrBi2Ta2O9/HfO2/Si using HfO2 as buffer layer

(2008) A Roy et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology