期刊
CHINESE PHYSICS B
卷 19, 期 3, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/19/3/037304
关键词
colossal electroresistance effect; electrical pulse induced resistance switching (EPIR); transparent resistance random access memory (TRRAM)
资金
- National Basic Research Program of China [2007CB925002]
- National High Technology Research and Development Program of China [2008AA031401]
- Chinese Academy of Sciences
We report that fully transparent resistive random access memory (TRRAM) devices based on ITO/TiO2/ITO sandwich structure, which are prepared by the method of RF magnetron sputtering, exhibit excellent switching stability. In the visible region (400-800 nm in wavelength) the TRRAM device has a transmittance of more than 80%. The fabricated TRRAM device shows a bipolar resistance switching behaviour at low voltage, while the retention test and rewrite cycles of more than 300,000 indicate the enhancement of switching capability. The mechanism of resistance switching is further explained by the forming and rupture processes of the. lament in the TiO2 layer with the help of more oxygen vacancies which are provided by the transparent ITO electrodes.
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