Effect of dimethylaluminumhydride-derived aluminum oxynitride passivation layer on the interface chemistry and band alignment of HfTiO-InGaAs gate stacks

Effect of High-Pressure Inert Gas Annealing on AlON/Ge Gate Stacks

(2012) Toshiyuki Tabata et al.   Applied Physics Express

“Smart” silicon: Switching between p‐ and n‐conduction under compression

(2012) Sergey V. Ovsyannikov et al.   APPLIED PHYSICS LETTERS

Correlation between Ga-O signature and midgap states at the Al2O3/In0.53Ga0.47As interface

(2012) Igor Krylov et al.   APPLIED PHYSICS LETTERS

Size-Dependent-Transport Study of $\hbox{In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion

(2012) Jiangjiang J. Gu et al.   IEEE ELECTRON DEVICE LETTERS

Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties

(2012) Rena Suzuki et al.   JOURNAL OF APPLIED PHYSICS

Defect states at III-V semiconductor oxide interfaces

(2011) L. Lin et al.   APPLIED PHYSICS LETTERS

Interfacial chemistry of oxides on InxGa(1−x)As and implications for MOSFET applications

(2011) C.L. Hinkle et al.   CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE

Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor

(2011) G He et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor

(2010) G. He et al.   APPLIED PHYSICS LETTERS

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

Surface passivation of III–V semiconductors for future CMOS devices—Past research, present status and key issues for future

(2010) H. Hasegawa et al.   APPLIED SURFACE SCIENCE

Investigation on GaAs surface treated with dimethylaluminumhydride

(2009) Hong-Liang Lu et al.   APPLIED PHYSICS LETTERS

Thermal nitridation passivation dependent band offset and electrical properties of AlOxNy/GaAs gate stacks

(2009) G. He et al.   APPLIED PHYSICS LETTERS

Reduction of native oxides on GaAs during atomic layer growth of Al2O3

(2009) Hang Dong Lee et al.   APPLIED PHYSICS LETTERS

Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation

(2009) Eun Ji Kim et al.   JOURNAL OF APPLIED PHYSICS

Pre-atomic layer deposition surface cleaning and chemical passivation of (100) In0.2Ga0.8As and deposition of ultrathin Al2O3 gate insulators

(2008) Byungha Shin et al.   APPLIED PHYSICS LETTERS

HfO2-based InP n-channel metal-oxide-semiconductor field-effect transistors and metal-oxide-semiconductor capacitors using a germanium interfacial passivation layer

(2008) Hyoung-Sub Kim et al.   APPLIED PHYSICS LETTERS

Inversion-type enhancement-mode HfO2-based GaAs metal-oxide-semiconductor field effect transistors with a thin Ge layer

(2008) Hyoung-Sub Kim et al.   APPLIED PHYSICS LETTERS

Study on interfacial properties of InGaAs and GaAs integrated with chemical-vapor-deposited high-k gate dielectrics using x-ray photoelectron spectroscopy

(2008) H. J. Oh et al.   APPLIED PHYSICS LETTERS

Atomic-layer-deposited HfO2 on In0.53Ga0.47As: Passivation and energy-band parameters

(2008) Y. C. Chang et al.   APPLIED PHYSICS LETTERS

Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces

(2008) M. Milojevic et al.   APPLIED PHYSICS LETTERS

GaAs interfacial self-cleaning by atomic layer deposition

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Surface passivation technology for III–V semiconductor nanoelectronics

(2008) Hideki Hasegawa et al.   APPLIED SURFACE SCIENCE

Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)

(2008) Peide D. Ye   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

(2008) C.X. Li et al.   MICROELECTRONICS RELIABILITY

Use of water vapor for suppressing the growth of unstable low-κ interlayer in HfTiO gate-dielectric Ge metal-oxide-semiconductor capacitors with sub-nanometer capacitance equivalent thickness

(2008) J.P. Xu et al.   THIN SOLID FILMS