Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

(2016) Sonal Dey et al.   JOURNAL OF APPLIED PHYSICS

A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement

(2016) Han Joon Kim et al.   Nanoscale

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

(2015) Min Hyuk Park et al.   ADVANCED MATERIALS

Contribution of oxygen vacancies to the ferroelectric behavior of Hf0.5Zr0.5O2 thin films

(2015) Takao Shimizu et al.   APPLIED PHYSICS LETTERS

Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling

(2015) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Observation of a periodic array of flux-closure quadrants in strained ferroelectric PbTiO3 films

(2015) Y. L. Tang et al.   SCIENCE

Towards quantitative electrostatic potential mapping of working semiconductor devices using off-axis electron holography

(2015) Sadegh Yazdi et al.   ULTRAMICROSCOPY

Inductive crystallization effect of atomic-layer-deposited Hf0.5Zr0.5O2 films for ferroelectric application

(2015) Xun Zhang et al.   Nanoscale Research Letters

Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes

(2014) S. Starschich et al.   APPLIED PHYSICS LETTERS

The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

(2014) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Direct observation of ferroelectric field effect and vacancy-controlled screening at the BiFeO 3 /La x Sr1−xMnO 3 interface

(2014) Young-Min Kim et al.   NATURE MATERIALS

Ferroelastic domain switching dynamics under electrical and mechanical excitations

(2014) Peng Gao et al.   Nature Communications

Interface-induced nonswitchable domains in ferroelectric thin films

(2014) Myung-Geun Han et al.   Nature Communications

Effect of forming gas annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films with and without Pt electrodes

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

(2013) Min Hyuk Park et al.   APPLIED PHYSICS LETTERS

Strain effects on formation and migration energies of oxygen vacancy in perovskite ferroelectrics: A first-principles study

(2013) Q. Yang et al.   JOURNAL OF APPLIED PHYSICS

Incipient Ferroelectricity in Al-Doped HfO2 Thin Films

(2012) Stefan Mueller et al.   ADVANCED FUNCTIONAL MATERIALS

Ferroelectricity in Simple Binary ZrO2 and HfO2

(2012) Johannes Müller et al.   NANO LETTERS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications

(2011) J. Müller et al.   APPLIED PHYSICS LETTERS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

High-k dielectrics for future generation memory devices (Invited Paper)

(2009) J.A. Kittl et al.   MICROELECTRONIC ENGINEERING

Physical and Electrical Properties of Hafnium–Zirconium–Oxide Films Grown by Atomic Layer Deposition

(2008) Seokhwan Bang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY