Role of Ge and Si substrates in higher-k tetragonal phase formation and interfacial properties in cyclical atomic layer deposition-anneal Hf1−xZrxO2/Al2O3 thin film stacks

Low temperature formation of higher-k cubic phase HfO2 by atomic layer deposition on GeOx/Ge structures fabricated by in-situ thermal oxidation

(2016) R. Zhang et al.   APPLIED PHYSICS LETTERS

Sub-0.5 nm Equivalent Oxide Thickness Scaling for Si-Doped Zr1–xHfxO2 Thin Film without Using Noble Metal Electrode

(2015) Ji-Hoon Ahn et al.   ACS Applied Materials & Interfaces

Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

(2015) Ryohei Asahara et al.   APPLIED PHYSICS LETTERS

Insights into thermal diffusion of germanium and oxygen atoms in HfO2/GeO2/Ge gate stacks and their suppressed reaction with atomically thin AlOx interlayers

(2015) Shingo Ogawa et al.   JOURNAL OF APPLIED PHYSICS

High-K materials and metal gates for CMOS applications

(2015) John Robertson et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

A brief review of atomic layer deposition: from fundamentals to applications

(2014) Richard W. Johnson et al.   Materials Today

Emerging Applications for High K Materials in VLSI Technology

(2014) Robert Clark   Materials

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al2O3/Ge structure

(2013) Shigehisa Shibayama et al.   APPLIED PHYSICS LETTERS

Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials

(2013) Sang Woon Lee et al.   COORDINATION CHEMISTRY REVIEWS

HfxZr1−xO2 compositional control using co-injection atomic layer deposition

(2012) Steven Consiglio et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Ultimate Scaling of High-κ Gate Dielectrics: Higher-κ or Interfacial Layer Scavenging?

(2012) Takashi Ando   Materials

VESTA 3for three-dimensional visualization of crystal, volumetric and morphology data

(2011) Koichi Momma et al.   JOURNAL OF APPLIED CRYSTALLOGRAPHY

Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices

(2011) J. R. Weber et al.   JOURNAL OF APPLIED PHYSICS

Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

(2010) Yung-Hsien Wu et al.   APPLIED PHYSICS LETTERS

Effects of rare-earth substitution in the oxyarsenides REFeAsO (RE=Ce, Pr, Nd, Sm, Gd) and CeNiAsO by X-ray photoelectron and absorption spectroscopy

(2010) Peter E.R. Blanchard et al.   JOURNAL OF SOLID STATE CHEMISTRY

Atomic Layer Deposition of High-kOxides of the Group 4 Metals for Memory Applications

(2009) Jaakko Niinistö et al.   ADVANCED ENGINEERING MATERIALS

Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic oxygen beam deposition

(2009) D. Tsoutsou et al.   JOURNAL OF APPLIED PHYSICS

Opportunities and challenges for Ge CMOS – Control of interfacing field on Ge is a key (Invited Paper)

(2009) Akira Toriumi et al.   MICROELECTRONIC ENGINEERING

Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium

(2009) D. Tsoutsou et al.   MICROELECTRONIC ENGINEERING

The effect of dopants on the dielectric constant of HfO[sub 2] and ZrO[sub 2] from first principles

(2008) Dominik Fischer et al.   APPLIED PHYSICS LETTERS

Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance

(2008) D. P. Brunco et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY