Self-rectifying bipolar resistive switching memory based on an iron oxide and graphene oxide hybrid

High-Speed and Low-Energy Nitride Memristors

(2016) Byung Joon Choi et al.   ADVANCED FUNCTIONAL MATERIALS

Nonlinear and multilevel resistive switching memory in Ni/Si3N4/Al2O3/TiN structures

(2016) Sungjun Kim et al.   APPLIED PHYSICS LETTERS

Highly Selective Hydrogenation of Biomass-Derived Furfural into Furfuryl Alcohol Using a Novel Magnetic Nanoparticles Catalyst

(2016) Ahmed Halilu et al.   ENERGY & FUELS

Self-selection effects and modulation of TaOx resistive switching random access memory with bottom electrode of highly doped Si

(2016) Muxi Yu et al.   JOURNAL OF APPLIED PHYSICS

Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices

(2016) Sen Mei et al.   MICROELECTRONICS RELIABILITY

Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application

(2016) Kyung Min Kim et al.   NANO LETTERS

Effect of Bottom Electrode on Resistive Switching Voltages in Ag-Based Electrochemical Metallization Memory Device

(2016) Sungjun Kim et al.   Journal of Semiconductor Technology and Science

Graphene Oxide–Phosphor Hybrid Nanoscrolls with High Luminescent Quantum Yield: Synthesis, Structural, and X-ray Absorption Studies

(2015) Janardhanan R. Rani et al.   ACS Applied Materials & Interfaces

Pt/Ta2O5/HfO2−x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash

(2015) Jung Ho Yoon et al.   ADVANCED MATERIALS

Low voltage resistive memory devices based on graphene oxide–iron oxide hybrid

(2015) Janardhanan R. Rani et al.   CARBON

Diodelike Bipolar Resistive Switching, High-Performance, and Ultralow Power Characteristics in GaO/SiNx:O Bilayer Structure

(2015) Tae Ho Lee et al.   IEEE ELECTRON DEVICE LETTERS

Three-Dimensional 128 Gb MLC Vertical nand Flash Memory With 24-WL Stacked Layers and 50 MB/s High-Speed Programming

(2015) Ki-Tae Park et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Self-rectifying resistive switching behavior observed in Si 3 N 4 -based resistive random access memory devices

(2015) Hee-Dong Kim et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Three-Dimensional Networked Nanoporous Ta2O5–x Memory System for Ultrahigh Density Storage

(2015) Gunuk Wang et al.   NANO LETTERS

Surface Plasmon Resonance-Coupled Photoluminescence and Resistive Switching Behavior of Pulsed Laser-Deposited Ag:SiC Nanocermet Thin Films

(2015) Koppole Kamakshi et al.   Plasmonics

Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage

(2015) Su-Ting Han et al.   Small

Gradual bipolar resistive switching in Ni/Si3N4/n+-Si resistive-switching memory device for high-density integration and low-power applications

(2015) Sungjun Kim et al.   SOLID-STATE ELECTRONICS

Value-added Synthesis of Graphene: Recycling Industrial Carbon Waste into Electrodes for High-Performance Electronic Devices

(2015) Hong-Kyu Seo et al.   Scientific Reports

a-SiNx:H-based ultra-low power resistive random access memory with tunable Si dangling bond conduction paths

(2015) Xiaofan Jiang et al.   Scientific Reports

Ultra-flexible nonvolatile memory based on donor-acceptor diketopyrrolopyrrole polymer blends

(2015) Ye Zhou et al.   Scientific Reports

Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure

(2014) Jung Ho Yoon et al.   ADVANCED FUNCTIONAL MATERIALS

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Studies on resistive switching characteristics of aluminum/graphene oxide/semiconductor nonvolatile memory cells

(2013) S. Mahaboob Jilani et al.   CARBON

Bipolar ${\rm Ni}/{\rm TiO}_{2}/{\rm HfO}_{2}/{\rm Ni}$ RRAM With Multilevel States and Self-Rectifying Characteristics

(2013) Chung-Wei Hsu et al.   IEEE ELECTRON DEVICE LETTERS

Promotional effect of Fe on perovskite LaNixFe1−xO3 catalyst for hydrogen production via steam reforming of toluene

(2013) U. Oemar et al.   INTERNATIONAL JOURNAL OF HYDROGEN ENERGY

Current self-complianced and self-rectifying resistive switching in Ag-electroded single Na-doped ZnO nanowires

(2013) Jing Qi et al.   Nanoscale

Self-Selection Unipolar $\hbox{HfO}_{x}$ -Based RRAM

(2012) X. A. Tran et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

(2011) Kuyyadi P. Biju et al.   CURRENT APPLIED PHYSICS

Three-Dimensional nand Flash Architecture Design Based on Single-Crystalline STacked ARray

(2011) Yoon Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure

(2010) Dong-Jin Yun et al.   APPLIED PHYSICS LETTERS

Nanoscale resistive memory with intrinsic diode characteristics and long endurance

(2010) Kuk-Hwan Kim et al.   APPLIED PHYSICS LETTERS

Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms

(2010) H. Y. Peng et al.   APPLIED PHYSICS LETTERS

A Pt/TiO2/Ti Schottky-type selection diode for alleviating the sneak current in resistance switching memory arrays

(2010) Woo Young Park et al.   NANOTECHNOLOGY

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Rewritable Switching of One Diode-One Resistor Nonvolatile Organic Memory Devices

(2009) Byungjin Cho et al.   ADVANCED MATERIALS

Current conduction mechanisms in Pr2O3/oxynitride laminated gate dielectrics

(2009) Fu-Chien Chiu et al.   JOURNAL OF APPLIED PHYSICS

High-Density Crossbar Arrays Based on a Si Memristive System

(2009) Sung Hyun Jo et al.   NANO LETTERS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS

Ab-initio investigation of Ni(Fe)/ZrO2(001) and Ni–Fe/ZrO2(001) interfaces

(2009) S.V. Eremeev et al.   SURFACE SCIENCE