期刊
DIAMOND AND RELATED MATERIALS
卷 19, 期 7-9, 页码 932-935出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2010.02.026
关键词
Diamond; H-terminated surface; Free surface passivation; FET
Surface Channel MESFETs (SC-FET) have suffered from instabilities and drift in the past. To overcome these effects a suitable device passivation seems to be one of the key aspects. In this investigation Atomic Layer Deposition (ALD) of AlN has been applied to Surface Channel FETs on hydrogenated diamond. Despite a deposition temperature of 370 degrees C, where usually the FET channel is permanently degraded, transistor operation with 65% of the initial current level could be obtained. (C) 2010 Elsevier B.V. All rights reserved.
作者
我是这篇论文的作者
点击您的名字以认领此论文并将其添加到您的个人资料中。
推荐
暂无数据