期刊
DIAMOND AND RELATED MATERIALS
卷 24, 期 -, 页码 206-209出版社
ELSEVIER SCIENCE SA
DOI: 10.1016/j.diamond.2012.01.020
关键词
Diamond; Nitrides; Aluminum nitride; Field effect transistor
类别
资金
- Grants-in-Aid for Scientific Research [23760319] Funding Source: KAKEN
AlN/diamond heterojunction field effect transistors with p-channel and normally-on depletion mode are developed, and the device performance is improved by reducing the contact resistances at source and drain contacts reported previously. The heterojunction structure is constructed from a c-axis-oriented AlN epilayer grown on oxygen-terminated (111) diamond substrate by metal-organic vapor phase epitaxy at temperatures as high as 1250 degrees C. Thermal treatment in the mixed hydrogen (H-2) and ammonia atmosphere just before AlN growth improves the AlN adhesion to diamond surface. In addition, this treatment simultaneously produces a much larger surface hole-carrier density than that obtained by conventional H-2-plasma treatment. X-ray photoelectron spectroscopy reveals the existence of carbon-nitrogen bonds at the diamond surface, and these may be responsible for such a large hole density. These results are promising in relation to new opportunities for developing diamond-based power electronic devices. (C) 2012 Elsevier B.V. All rights reserved.
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