期刊
JOURNAL OF CRYSTAL GROWTH
卷 311, 期 20, 页码 4473-4477出版社
ELSEVIER
DOI: 10.1016/j.jcrysgro.2009.08.009
关键词
Nonpolar; In-plane anisotropy; HVPE; Off-angle r-plane sapphire; a-plane AlN
资金
- JSPS [1907375]
- Ministry of Education, Culture, Sports, Science and Technology [21360007, 18069006]
- Grants-in-Aid for Scientific Research [18069006, 21360007] Funding Source: KAKEN
The effect of the off-cut angle of an r-plane sapphire substrate has been investigated on the growth of a-plane AlN thick layer by low-pressure hydride vapor phase epitaxy (LP-HVPE). The off-cut angle (theta) was changed from +5.0 degrees (close to c-axis) to -5.0 degrees (close to m-axis). Results show that the crystalline quality and surface morphology are very sensitive to the sign of theta off-angle. The plus theta off-angle is found to be dramatically reduce the full-widths at half-maximum (FWHM) of X-ray rocking curves (XRC), compared with the minus theta off-angle. In-plane FWHM anisotropic feature marked as M- or W-shape dependence on azimuth angle was observed for a-plane AlN. The shape and degree of anisotropy depend on the sign of theta off-angle, while the plus of theta off-angle will leads to the W-shape and the decreased anisotropy. The minimum crystal tilts and twists of the films are observed for the vicinal sapphires with the plus off-angles of +0.2 degrees to +1.0 degrees. (C) 2009 Elsevier B.V. All rights reserved.
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