Ultra low density of interfacial traps with mixed thermal and plasma enhanced ALD of high-κ gate dielectrics

Probing initial-stages of ALD growth with dynamic in situ spectroscopic ellipsometry

(2015) Triratna Muneshwar et al.   APPLIED SURFACE SCIENCE

Low temperature plasma enhanced atomic layer deposition of conducting zirconium nitride films using tetrakis (dimethylamido) zirconium and forming gas (5% H2 + 95% N2) plasma

(2015) Triratna Muneshwar et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Structure–property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition

(2015) P. Motamedi et al.   RSC Advances

A route to low temperature growth of single crystal GaN on sapphire

(2015) Pouyan Motamedi et al.   Journal of Materials Chemistry C

Extremely scaled high-k/In0.53Ga0.47As gate stacks with low leakage and low interface trap densities

(2014) Varistha Chobpattana et al.   JOURNAL OF APPLIED PHYSICS

A brief review of atomic layer deposition: from fundamentals to applications

(2014) Richard W. Johnson et al.   Materials Today

Structural properties and electrical characteristics of Ho2O3 and HoTixOy gate dielectrics for a-InGaZnO thin-film transistors

(2014) Tung-Ming Pan et al.   RSC Advances

Ultra-thin Al2O3 films grown by atomic layer deposition for corrosion protection of copper

(2014) Zhimin Chai et al.   RSC Advances

Growth mechanism of atomic layer deposition of zinc oxide: A density functional theory approach

(2013) Amir Afshar et al.   APPLIED PHYSICS LETTERS

ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

(2013) P. von Hauff et al.   APPLIED PHYSICS LETTERS

Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities

(2013) Varistha Chobpattana et al.   APPLIED PHYSICS LETTERS

Electrical Comparison of ${\rm HfO}_{2}$ and ${\rm ZrO}_{2}$ Gate Dielectrics on GaN

(2013) Kyle M. Bothe et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Influence of plasma-based in-situ surface cleaning procedures on HfO2/In0.53Ga0.47As gate stack properties

(2013) Varistha Chobpattana et al.   JOURNAL OF APPLIED PHYSICS

Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

(2012) Igor Krylov et al.   APPLIED PHYSICS LETTERS

Capacitance Modeling and Characterization of Planar MOSCAP Devices for Wideband-Gap Semiconductors With High-$\kappa$ Dielectrics

(2012) Kyle M. Bothe et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Conductor–insulator transition and electronic structure of Ca-doped BiFeO3 films

(2012) Kaveh Ahadi et al.   MATERIALS LETTERS

Atomic layer deposition and characterization of vanadium oxide thin films

(2012) Timothee Blanquart et al.   RSC Advances

Investigation of dark and light conductivities in calcium doped bismuth ferrite thin films

(2011) M. Kianinia et al.   MATERIALS LETTERS

Electronic structure and morphological study of BaTiO3 film grown by pulsed-laser deposition

(2011) Kaveh Ahadi et al.   MATERIALS LETTERS

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Epitaxial SrTiO3 films with electron mobilities exceeding 30,000 cm2 V−1 s−1

(2010) Junwoo Son et al.   NATURE MATERIALS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Maximizing performance for higher K gate dielectrics

(2008) John Robertson   JOURNAL OF APPLIED PHYSICS