Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

Elimination of the weak inversion hump in Si3N4/InGaAs (001) gate stacks using an in situ NH3 pre-treatment

(2011) Igor Krylov et al.   APPLIED PHYSICS LETTERS

Influence of trimethylaluminum on the growth and properties of HfO2/In0.53Ga0.47As interfaces

(2011) Yoontae Hwang et al.   APPLIED PHYSICS LETTERS

A systematic study of (NH4)2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

(2011) É. O’Connor et al.   JOURNAL OF APPLIED PHYSICS

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

(2010) Eun Ji Kim et al.   APPLIED PHYSICS LETTERS

Effect of postdeposition anneals on the Fermi level response of HfO2/In0.53Ga0.47As gate stacks

(2010) Yoontae Hwang et al.   JOURNAL OF APPLIED PHYSICS

Metal-oxide-semiconductor capacitors with ZrO2 dielectrics grown on In0.53Ga0.47As by chemical beam deposition

(2009) Roman Engel-Herbert et al.   APPLIED PHYSICS LETTERS

Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

On the Correct Extraction of Interface Trap Density of MOS Devices With High-Mobility Semiconductor Substrates

(2008) Koen Martens et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES