Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning

(2022) Theresia Knobloch et al.   Nature Electronics

Toward Low-Temperature Solid-Source Synthesis of Monolayer MoS2

(2021) Alvin Tang et al.   ACS Applied Materials & Interfaces

Ultrathin Multibridge Channel Transistor Enabled by van der Waals Assembly

(2021) Xiaohe Huang et al.   ADVANCED MATERIALS

Transferred metal gate to 2D semiconductors for sub-1 V operation and near ideal subthreshold slope

(2021) Jingli Wang et al.   Science Advances

Transistors based on two-dimensional materials for future integrated circuits

(2021) Saptarshi Das et al.   Nature Electronics

Low Schottky barrier contacts to 2H-MoS2 by Sn electrodes

(2020) Zhonghan Cao et al.   APPLIED PHYSICS LETTERS

Effect of the Degree of the Gate‐Dielectric Surface Roughness on the Performance of Bottom‐Gate Organic Thin‐Film Transistors

(2020) Michael Geiger et al.   Advanced Materials Interfaces

High Voltage Gain WSe2 Complementary Compact Inverter With Buried Gate for Local Doping

(2020) Da Wan et al.   IEEE ELECTRON DEVICE LETTERS

Spatial defects nanoengineering for bipolar conductivity in MoS2

(2020) Xiaorui Zheng et al.   Nature Communications

High-current MoS2 transistors with non-planar gate configuration

(2020) Jun Lin et al.   Science Bulletin

Laser-writable high-k dielectric for van der Waals nanoelectronics

(2019) N. Peimyoo et al.   Science Advances

Ultrathin monolithic HfO2 formed by Hf-seeded atomic layer deposition on MoS2: Film characteristics and its transistor application

(2019) Hoijoon Kim et al.   THIN SOLID FILMS

Chemical and structural stability of 2-dimensional layered materials

(2019) Xuewen Wang et al.   2D Materials

Modeling of surface gap state passivation and Fermi level de-pinning in solar cells

(2019) Haichang Lu et al.   APPLIED PHYSICS LETTERS

CrI3-WTe2: A Novel Two-Dimensional Heterostructure as Multisensor for BrF3 and COCL2 Toxic Gases

(2019) Amreen Bano et al.   Scientific Reports

Reliability of scalable MoS2 FETs with 2 nm crystalline CaF2 insulators

(2019) Yury Yu Illarionov et al.   2D Materials

Chemisorption of NO 2 to MoS 2 Nanostructures and its Effects for MoS 2 Sensors

(2019) Jialiang Huang et al.   ChemNanoMat

Probing the edge-related properties of atomically thin MoS2 at nanoscale

(2019) Teng-Xiang Huang et al.   Nature Communications

MoS2 Negative-Capacitance Field-Effect Transistors with Subthreshold Swing below the Physics Limit

(2018) Xingqiang Liu et al.   ADVANCED MATERIALS

Dielectric-induced interface states in black phosphorus and tungsten diselenide capacitors

(2018) Jialun Liu et al.   APPLIED PHYSICS LETTERS

High-k Gate Dielectrics for Emerging Flexible and Stretchable Electronics

(2018) Binghao Wang et al.   CHEMICAL REVIEWS

Interfacial Coupling Effect on Electron Transport in MoS2/SrTiO3 Heterostructure: An Ab-initio Study

(2018) Amreen Bano et al.   Scientific Reports

HfO2/HfS2 hybrid heterostructure fabricated via controllable chemical conversion of two-dimensional HfS2

(2018) Shen Lai et al.   Nanoscale

Monolayer atomic crystal molecular superlattices

(2018) Chen Wang et al.   NATURE

Advanced capabilities for materials modelling with Quantum ESPRESSO

(2017) P Giannozzi et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Low-Temperature Ohmic Contact to Monolayer MoS2 by van der Waals Bonded Co/h-BN Electrodes

(2017) Xu Cui et al.   NANO LETTERS

Steep-slope hysteresis-free negative capacitance MoS2 transistors

(2017) Mengwei Si et al.   Nature Nanotechnology

Probing nanoscale oxygen ion motion in memristive systems

(2017) Yuchao Yang et al.   Nature Communications

HfSe 2 and ZrSe 2 : Two-dimensional semiconductors with native high-κ oxides

(2017) Michal J. Mleczko et al.   Science Advances

Enhancing Photoresponsivity of Self-Aligned MoS2 Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires

(2016) Xingqiang Liu et al.   ACS Nano

Long-Term Stability and Reliability of Black Phosphorus Field-Effect Transistors

(2016) Yury Yuryevich Illarionov et al.   ACS Nano

Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

(2016) Xuming Zou et al.   ADVANCED MATERIALS

High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer

(2016) Jingli Wang et al.   ADVANCED MATERIALS

Chemisorption-induced n-doping of MoS2 by oxygen

(2016) Long Qi et al.   APPLIED PHYSICS LETTERS

Transparent megahertz circuits from solution-processed composite thin films

(2016) Xingqiang Liu et al.   Nanoscale

MoS2 transistors with 1-nanometer gate lengths

(2016) S. B. Desai et al.   SCIENCE

Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria

(2015) Arjun Dahal et al.   ACS Applied Materials & Interfaces

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Electronic transport properties of transition metal dichalcogenide field-effect devices: surface and interface effects

(2015) Hennrik Schmidt et al.   CHEMICAL SOCIETY REVIEWS

HfO2on UV–O3exposed transition metal dichalcogenides: interfacial reactions study

(2015) Angelica Azcatl et al.   2D Materials

Interface Engineering for High-Performance Top-Gated MoS2Field-Effect Transistors

(2014) Xuming Zou et al.   ADVANCED MATERIALS

Scaling laws for van der Waals interactions in nanostructured materials

(2013) Vivekanand V. Gobre et al.   Nature Communications

Temperature dependence of the dielectric constant of acrylic dielectric elastomer

(2012) Junjie Sheng et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Bonding Mechanisms of Graphene on Metal Surfaces

(2012) Sergey M. Kozlov et al.   Journal of Physical Chemistry C

Integrated Circuits Based on Bilayer MoS2 Transistors

(2012) Han Wang et al.   NANO LETTERS

Benzene adsorbed on metals: Concerted effect of covalency and van der Waals bonding

(2012) Wei Liu et al.   PHYSICAL REVIEW B

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals

(2012) Sunkook Kim et al.   Nature Communications

Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films

(2011) Sufi Zafar et al.   APPLIED PHYSICS LETTERS

Single-layer MoS2 transistors

(2011) B. Radisavljevic et al.   Nature Nanotechnology

Parallel reactive molecular dynamics: Numerical methods and algorithmic techniques

(2011) H.M. Aktulga et al.   PARALLEL COMPUTING

Bonding and charge transfer by metal adatom adsorption on graphene

(2011) Xiaojie Liu et al.   PHYSICAL REVIEW B

Metal-oxide-semiconductor field-effect-transistors on indium phosphide using HfO2 and silicon passivation layer with equivalent oxide thickness of 18 Å

(2009) Yen-Ting Chen et al.   APPLIED PHYSICS LETTERS