Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications

标题
Influence of Al2O3 layer on InGaZnO memristor crossbar array for neuromorphic applications
作者
关键词
Memristor, Memristor crossbar array, Switching Mechanism, Schottky barrier modulation, Pattern classification, Winner-takes-all
出版物
CHAOS SOLITONS & FRACTALS
Volume 156, Issue -, Pages 111813
出版商
Elsevier BV
发表日期
2022-01-29
DOI
10.1016/j.chaos.2022.111813

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