Bipolar and Complementary Resistive Switching Characteristics and Neuromorphic System Simulation in a Pt/ZnO/TiN Synaptic Device

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

(2020) Lei Wu et al.   Nanomaterials

Neurohybrid Memristive CMOS-Integrated Systems for Biosensors and Neuroprosthetics

(2020) Alexey Mikhaylov et al.   Frontiers in Neuroscience

In Quest of Nonfilamentary Switching: A Synergistic Approach of Dual Nanostructure Engineering to Improve the Variability and Reliability of Resistive Random‐Access‐Memory Devices

(2020) Siddheswar Maikap et al.   Advanced Electronic Materials

Nonlinear Characteristics of Complementary Resistive Switching in HfAlOx-Based Memristor for High-Density Cross-Point Array Structure

(2020) Junhyeok Choi et al.   Coatings

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

(2020) Tae-Hyeon Kim et al.   APPLIED PHYSICS LETTERS

Coexistence of Long‐Term Memory and Short‐Term Memory in an SiN x ‐Based Memristor

(2020) Junhyeok Choi et al.   Physica Status Solidi-Rapid Research Letters

Improved Stability and Controllability in ZrN-Based Resistive Memory Device by Inserting TiO2 Layer

(2020) Junhyeok Choi et al.   Micromachines

Voltage Amplitude-Controlled Synaptic Plasticity from Complementary Resistive Switching in Alloying HfOx with AlOx-Based RRAM

(2020) Hojeong Ryu et al.   Metals

Synaptic Characteristics from Homogeneous Resistive Switching in Pt/Al2O3/TiN Stack

(2020) Hojeong Ryu et al.   Nanomaterials

Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM

(2020) Sungjoon Kim et al.   APPLIED PHYSICS LETTERS

Long-term and short-term plasticity of Ta2O5/HfO2 memristor for hardware neuromorphic application

(2020) Ji-Ho Ryu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Self-adaptive STDP-based learning of a spiking neuron with nanocomposite memristive weights

(2019) A V Emelyanov et al.   NANOTECHNOLOGY

Emerging memory technologies for neuromorphic computing

(2018) Chul-Heung Kim et al.   NANOTECHNOLOGY

Behavioral Features of MIS Memristors with a Si3N4 Nanolayer Fabricated on a Conductive Si Substrate

(2018) S. V. Tikhov et al.   SEMICONDUCTORS

Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

(2018) M. Prezioso et al.   Nature Communications

Bipolar Analog Memristors as Artificial Synapses for Neuromorphic Computing

(2018) Rui Wang et al.   Materials

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Thickness Influence on In Vitro Biocompatibility of Titanium Nitride Thin Films Synthesized by Pulsed Laser Deposition

(2016) Liviu Duta et al.   Materials

Status and Prospects of ZnO-Based Resistive Switching Memory Devices

(2016) Firman Mangasa Simanjuntak et al.   Nanoscale Research Letters

Complementary switching on TiN/MgZnO/ZnO/Pt bipolar memory devices for nanocrossbar arrays

(2014) Xinman Chen et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

(2014) Yao-Feng Chang et al.   JOURNAL OF APPLIED PHYSICS

Impact of Electrolyte on Pseudocapacitance and Stability of Porous Titanium Nitride (TiN) Monolithic Electrode

(2014) George Hasegawa et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Manipulated Transformation of Filamentary and Homogeneous Resistive Switching on ZnO Thin Film Memristor with Controllable Multistate

(2013) Chi-Hsin Huang et al.   ACS Applied Materials & Interfaces

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

A correlated nickelate synaptic transistor

(2013) Jian Shi et al.   Nature Communications

Preparation of boron and phosphor co-doped TiO2 nanotube arrays and their photoelectrochemical property

(2012) Xiaosong Zhou et al.   ELECTROCHEMISTRY COMMUNICATIONS

Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films

(2012) Fu-Chien Chiu et al.   Nanoscale Research Letters

Chemical Bonding States of Plasma Nitrided High-k/Ge Gate Stack

(2011) C. Mahata et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

(2011) Hee-Dong Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application

(2009) Yu Chao Yang et al.   NANO LETTERS