Current suppressed self-compliance characteristics of oxygen rich TiOy inserted Al2O3/TiOx based RRAM

Self-Compliance and High Performance Pt/HfOx/Ti RRAM Achieved through Annealing

(2020) Lei Wu et al.   Nanomaterials

Reset-voltage-dependent precise tuning operation of TiOx/Al2O3 memristive crossbar array

(2020) Tae-Hyeon Kim et al.   APPLIED PHYSICS LETTERS

Multi-Level Cell Properties of a Bilayer Cu2O/Al2O3 Resistive Switching Device

(2019) Jonas Deuermeier et al.   Nanomaterials

Realization of Self-Compliance Resistive Switching Memory via Tailoring Interfacial Oxygen

(2019) Haizhong Zhang et al.   ACS Applied Materials & Interfaces

Compliance-Free, Digital SET and Analog RESET Synaptic Characteristics of Sub-Tantalum Oxide Based Neuromorphic Device

(2018) Yawar Abbas et al.   Scientific Reports

Design of CMOS Compatible, High-Speed, Highly-Stable Complementary Switching with Multilevel Operation in 3D Vertically Stacked Novel HfO2 /Al2 O3 /TiO x (HAT) RRAM

(2018) Writam Banerjee et al.   Advanced Electronic Materials

Spike-timing-dependent plasticity learning of coincidence detection with passively integrated memristive circuits

(2018) M. Prezioso et al.   Nature Communications

Very Low-Programming-Current RRAM With Self-Rectifying Characteristics

(2016) Jiantao Zhou et al.   IEEE ELECTRON DEVICE LETTERS

Formation of oxygen vacancies and Ti3+ state in TiO2 thin film and enhanced optical properties by air plasma treatment

(2016) Bandna Bharti et al.   Scientific Reports

Filamentary Switching: Synaptic Plasticity through Device Volatility

(2015) Selina La Barbera et al.   ACS Nano

Correlative analysis of conducting filament distribution at interfaces and bias-dependent noise sources in TiN/TiOx/Pt and Pt/TiOx/TiOy/Pt bipolar resistive switching frames

(2015) Joo Hyung Kim et al.   APPLIED PHYSICS LETTERS

Self-compliance RRAM characteristics using a novel W/TaOx/TiN structure

(2014) Siddheswar Maikap et al.   Nanoscale Research Letters

Thermally activated non-linearity of device in resistance-switching memory for cross-point array applications

(2013) Jiyong Woo et al.   APPLIED PHYSICS LETTERS

Highly Uniform, Self-Compliance, and Forming-Free ALD $\hbox{HfO}_{2}$ -Based RRAM With Ge Doping

(2012) Zhongrui Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy

(2012) Shimeng Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Memristive devices for computing

(2012) J. Joshua Yang et al.   Nature Nanotechnology

Metal–Oxide RRAM

(2012) H.-S. Philip Wong et al.   PROCEEDINGS OF THE IEEE

Oxygen Ion Drift-Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOxand Hetero TiOx/TiON/TiOxTriple Multilayer Frameworks

(2011) Yoon Cheol Bae et al.   ADVANCED FUNCTIONAL MATERIALS

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

(2011) Kyungah Seo et al.   NANOTECHNOLOGY

Resolving surface chemical states in XPS analysis of first row transition metals, oxides and hydroxides: Sc, Ti, V, Cu and Zn

(2010) Mark C. Biesinger et al.   APPLIED SURFACE SCIENCE

Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern Dependencies

(2010) Jiale Liang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

(2010) Sung Hyun Jo et al.   NANO LETTERS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS