Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors

标题
Conduction mechanism effect on physical unclonable function using Al2O3/TiOX memristors
作者
关键词
Physical unclonable function (PUF), Hardware security, Memristor, Variation, Switching characteristics, Conduction mechanism
出版物
CHAOS SOLITONS & FRACTALS
Volume 152, Issue -, Pages 111388
出版商
Elsevier BV
发表日期
2021-09-10
DOI
10.1016/j.chaos.2021.111388

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