Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories

A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect

(2011) Bin Gao et al.   APPLIED PHYSICS LETTERS

Ultralow Switching Energy Ni/$\hbox{GeO}_{x}$/HfON/TaN RRAM

(2011) C. H. Cheng et al.   IEEE ELECTRON DEVICE LETTERS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories

(2011) D Ielmini et al.   NANOTECHNOLOGY

On the Gradual Unipolar and Bipolar Resistive Switching of TiN\HfO[sub 2]\Pt Memory Systems

(2010) L. Goux et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Size-Dependent Retention Time in NiO-Based Resistive-Switching Memories

(2010) D. Ielmini et al.   IEEE ELECTRON DEVICE LETTERS

Direct observation of the semimetal-to-semiconductor transition of individual single-crystal bismuth nanowires grown by on-film formation of nanowires

(2010) Seunghyun Lee et al.   NANOTECHNOLOGY

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE