标题
Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling
作者
关键词
Van der Waals epitaxy, Quasi van der Waals epitaxy, 2D chalcogenides, Transition metal dichalcogenides, Molecular beam epitaxy, Metalorganic vapor phase epitaxy, Chemical vapor epitaxy
出版物
Applied Materials Today
Volume 22, Issue -, Pages 100975
出版商
Elsevier BV
发表日期
2021-02-23
DOI
10.1016/j.apmt.2021.100975
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Epitaxy of 2D chalcogenides: Aspects and consequences of weak van der Waals coupling
- (2021) Wouter Mortelmans et al. Applied Materials Today
- Grain-Boundary-Induced Strain and Distortion in Epitaxial Bilayer MoS2 Lattice
- (2020) Ankit Nalin Mehta et al. Journal of Physical Chemistry C
- Effect of Substrate Orientation on MoSe2/GaAs Heteroepitaxy
- (2020) Akihiro Ohtake et al. Journal of Physical Chemistry C
- Fundamental limitation of van der Waals homoepitaxy by stacking fault formation in WSe2
- (2020) Wouter Mortelmans et al. 2D Materials
- On the van der Waals Epitaxy of Homo-/Heterostructures of Transition Metal Dichalcogenides
- (2020) Wouter Mortelmans et al. ACS Applied Materials & Interfaces
- New approach for the molecular beam epitaxy growth of scalable WSe2 monolayers
- (2020) Céline Vergnaud et al. NANOTECHNOLOGY
- Epitaxial registry and crystallinity of MoS2 via molecular beam and metalorganic vapor phase van der Waals epitaxy
- (2020) Wouter Mortelmans et al. APPLIED PHYSICS LETTERS
- A foundation for complex oxide electronics -low temperature perovskite epitaxy
- (2020) Henrik H. Sønsteby et al. Nature Communications
- Origin of ultrafast growth of monolayer WSe2 via chemical vapor deposition
- (2019) Shuai Chen et al. npj Computational Materials
- How 2D semiconductors could extend Moore’s law
- (2019) Ming-Yang Li et al. NATURE
- Heteroepitaxy of MoSe2 on Si(111) substrates: Role of surface passivation
- (2019) Akihiro Ohtake et al. APPLIED PHYSICS LETTERS
- Electrical Conduction at the Interface between Insulating van der Waals Materials
- (2019) Yuta Kashiwabara et al. ADVANCED FUNCTIONAL MATERIALS
- Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
- (2019) Xiaotian Zhang et al. ACS Nano
- van der Waals heteroepitaxy on muscovite
- (2019) Min Yen et al. MATERIALS CHEMISTRY AND PHYSICS
- Atomic and electronic reconstruction at the van der Waals interface in twisted bilayer graphene
- (2019) Hyobin Yoo et al. NATURE MATERIALS
- Magnetic 2D materials and heterostructures
- (2019) M. Gibertini et al. Nature Nanotechnology
- Approaching the Intrinsic Limit in Transition Metal Diselenides via Point Defect Control
- (2019) Drew Edelberg et al. NANO LETTERS
- Freestanding crystalline oxide perovskites down to the monolayer limit
- (2019) Dianxiang Ji et al. NATURE
- Direct band-gap crossover in epitaxial monolayer boron nitride
- (2019) C. Elias et al. Nature Communications
- Topological nanomaterials
- (2019) Pengzi Liu et al. Nature Reviews Materials
- Peculiar alignment and strain of 2D WSe2 grown by van der Waals epitaxy on reconstructed sapphire surfaces
- (2019) Wouter Mortelmans et al. NANOTECHNOLOGY
- Graphene and two-dimensional materials for silicon technology
- (2019) Deji Akinwande et al. NATURE
- Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities
- (2019) Shi‐Jun Liang et al. ADVANCED MATERIALS
- All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
- (2019) Maheswari Sivan et al. Nature Communications
- Importance of the substrate’s surface evolution during the MOVPE growth of 2D-transition metal dichalcogenides
- (2019) Jiongjiong Mo et al. NANOTECHNOLOGY
- Beyond van der Waals Interaction: The Case of MoSe2 Epitaxially Grown on Few-Layer Graphene
- (2018) Minh Tuan Dau et al. ACS Nano
- Strain Modulation by van der Waals Coupling in Bilayer Transition Metal Dichalcogenide
- (2018) Xiaoxu Zhao et al. ACS Nano
- Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride
- (2018) Sock Mui Poh et al. ACS Nano
- Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors
- (2018) Yu-Chuan Lin et al. ACS Nano
- Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy
- (2018) Polychronis Tsipas et al. ACS Nano
- Direct Observation at Room Temperature of the Orthorhombic Weyl Semimetal Phase in Thin Epitaxial MoTe2
- (2018) Polychronis Tsipas et al. ADVANCED FUNCTIONAL MATERIALS
- 2D or Not 2D: Strain Tuning in Weakly Coupled Heterostructures
- (2018) Ruining Wang et al. ADVANCED FUNCTIONAL MATERIALS
- Atomic Layer Deposition of Rhenium Disulfide
- (2018) Jani Hämäläinen et al. ADVANCED MATERIALS
- Tailoring the epitaxy of Sb2Te3 and GeTe thin films using surface passivation
- (2018) Jamo Momand et al. CRYSTENGCOMM
- MBE growth of few-layer 2H-MoTe 2 on 3D substrates
- (2018) Suresh Vishwanath et al. JOURNAL OF CRYSTAL GROWTH
- Diffusion-Controlled Epitaxy of Large Area Coalesced WSe2 Monolayers on Sapphire
- (2018) Xiaotian Zhang et al. NANO LETTERS
- Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2
- (2018) Jiagui Feng et al. NANO LETTERS
- Wafer-scale synthesis of monolayer WS2 for high-performance flexible photodetectors by enhanced chemical vapor deposition
- (2018) Changyong Lan et al. Nano Research
- Strain engineering of van der Waals heterostructures
- (2018) Paul A. Vermeulen et al. Nanoscale
- Probing magnetism in 2D van der Waals crystalline insulators via electron tunneling
- (2018) D. R. Klein et al. SCIENCE
- Emerging two-dimensional ferromagnetism in silicene materials
- (2018) Andrey M. Tokmachev et al. Nature Communications
- Multimodal Spectromicroscopy of Monolayer WS2 Enabled by Ultra-Clean van der Waals Epitaxy
- (2018) Christoph Kastl et al. 2D Materials
- Molecular beam epitaxy of quasi-freestanding transition metal disulphide monolayers on van der Waals substrates: a growth study
- (2018) Joshua Hall et al. 2D Materials
- Band-bending induced by charged defects and edges of atomically thin transition metal dichalcogenide films
- (2018) T Le Quang et al. 2D Materials
- Perspective: 2D for beyond CMOS
- (2018) Joshua A. Robinson APL Materials
- Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire
- (2018) Kenshiro Suenaga et al. ACS Nano
- Transport properties of a few nanometer-thick TiSe2 films grown by molecular-beam epitaxy
- (2018) Yue Wang et al. APPLIED PHYSICS LETTERS
- Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer
- (2018) Carlos J Alvarez et al. NANOTECHNOLOGY
- Layer-controlled epitaxy of 2D semiconductors: bridging nanoscale phenomena to wafer-scale uniformity
- (2018) Daniele Chiappe et al. NANOTECHNOLOGY
- GaN/NbN epitaxial semiconductor/superconductor heterostructures
- (2018) Rusen Yan et al. NATURE
- Atomic layer deposition of stable 2D materials
- (2018) Wenjun Hao et al. 2D Materials
- Epitaxial Growth of Two-Dimensional Metal–Semiconductor Transition-Metal Dichalcogenide Vertical Stacks (VSe2/MX2) and Their Band Alignments
- (2018) Zhepeng Zhang et al. ACS Nano
- Two-Terminal Multibit Optical Memory via van der Waals Heterostructure
- (2018) Minh Dao Tran et al. ADVANCED MATERIALS
- Molecular Epitaxy on Two-Dimensional Materials: The Interplay between Interactions
- (2017) Tian Tian et al. INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
- van der Waals epitaxy of Ge films on mica
- (2017) A. J. Littlejohn et al. JOURNAL OF APPLIED PHYSICS
- Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
- (2017) Choong Hee Lee et al. JOURNAL OF APPLIED PHYSICS
- Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2
- (2017) M. Marx et al. JOURNAL OF ELECTRONIC MATERIALS
- Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride
- (2017) Deyi Fu et al. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
- Recent development of two-dimensional transition metal dichalcogenides and their applications
- (2017) Wonbong Choi et al. Materials Today
- Layer-by-Layer Epitaxial Growth of Scalable WSe2 on Sapphire by Molecular Beam Epitaxy
- (2017) Masaki Nakano et al. NANO LETTERS
- Atomistic dynamics of sulfur-deficient high-symmetry grain boundaries in molybdenum disulfide
- (2017) Jinhua Hong et al. Nanoscale
- Twisted MX2/MoS2 heterobilayers: effect of van der Waals interaction on the electronic structure
- (2017) Ning Lu et al. Nanoscale
- Layer-controlled precise fabrication of ultrathin MoS2 films by atomic layer deposition
- (2017) Lei Liu et al. NANOTECHNOLOGY
- Topological superconductivity in monolayer transition metal dichalcogenides
- (2017) Yi-Ting Hsu et al. Nature Communications
- Growth control, interface behavior, band alignment, and potential device applications of 2D lateral heterostructures
- (2017) Jijun Zhao et al. Wiley Interdisciplinary Reviews-Computational Molecular Science
- Engineering the Electronic Properties of Two-Dimensional Transition Metal Dichalcogenides by Introducing Mirror Twin Boundaries
- (2017) Hannu-Pekka Komsa et al. Advanced Electronic Materials
- Twin domain imaging in topological insulator Bi2Te3 and Bi2Se3 epitaxial thin films by scanning X-ray nanobeam microscopy and electron backscatter diffraction
- (2017) Dominik Kriegner et al. JOURNAL OF APPLIED CRYSTALLOGRAPHY
- Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics
- (2017) Ding Zhong et al. Science Advances
- Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides
- (2017) Kehao Zhang et al. Nanoscale
- Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy
- (2016) Anupam Roy et al. ACS Applied Materials & Interfaces
- Epitaxial 2D MoSe2 (HfSe2) Semiconductor/2D TaSe2 Metal van der Waals Heterostructures
- (2016) Dimitra Tsoutsou et al. ACS Applied Materials & Interfaces
- High-Performance WSe2 Field-Effect Transistors via Controlled Formation of In-Plane Heterojunctions
- (2016) Bilu Liu et al. ACS Nano
- van der Waals Epitaxy of GaSe/Graphene Heterostructure: Electronic and Interfacial Properties
- (2016) Zeineb Ben Aziza et al. ACS Nano
- Epitaxial growth of monolayer MoSe2on GaAs
- (2016) Koji Onomitsu et al. Applied Physics Express
- High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2
- (2016) Horacio Coy Diaz et al. APPLIED PHYSICS LETTERS
- Evolution of Surface and Interface Structures in Molecular-Beam Epitaxy of MoSe2 on GaAs(111)A and (111)B
- (2016) Akihiro Ohtake et al. CRYSTAL GROWTH & DESIGN
- Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates
- (2016) Celso I. Fornari et al. JOURNAL OF APPLIED PHYSICS
- Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy
- (2016) Suresh Vishwanath et al. JOURNAL OF MATERIALS RESEARCH
- Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films
- (2016) Yi Zhang et al. NANO LETTERS
- Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
- (2016) Debora Pierucci et al. NANO LETTERS
- 2D materials and van der Waals heterostructures
- (2016) K. S. Novoselov et al. SCIENCE
- Misorientation-angle-dependent electrical transport across molybdenum disulfide grain boundaries
- (2016) Thuc Hue Ly et al. Nature Communications
- Discovery of a new type of topological Weyl fermion semimetal state in MoxW1−xTe2
- (2016) Ilya Belopolski et al. Nature Communications
- Controlling nucleation of monolayer WSe2during metal-organic chemical vapor deposition growth
- (2016) Sarah M Eichfeld et al. 2D Materials
- Molecular beam epitaxial growth and electronic transport properties of high quality topological insulator Bi2Se3thin films on hexagonal boron nitride
- (2016) Joon Young Park et al. 2D Materials
- Molecular beam epitaxy of thin HfTe2semimetal films
- (2016) S Aminalragia-Giamini et al. 2D Materials
- First principles kinetic Monte Carlo study on the growth patterns of WSe2monolayer
- (2016) Yifan Nie et al. 2D Materials
- Defect engineering of two-dimensional transition metal dichalcogenides
- (2016) Zhong Lin et al. 2D Materials
- Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides
- (2016) Andreas Pospischil et al. Applied Sciences-Basel
- Surface Defects on Natural MoS2
- (2015) Rafik Addou et al. ACS Applied Materials & Interfaces
- Step-Edge-Guided Nucleation and Growth of Aligned WSe2 on Sapphire via a Layer-over-Layer Growth Mode
- (2015) Liang Chen et al. ACS Nano
- Highly Scalable, Atomically Thin WSe2 Grown via Metal–Organic Chemical Vapor Deposition
- (2015) Sarah M. Eichfeld et al. ACS Nano
- Freestanding van der Waals Heterostructures of Graphene and Transition Metal Dichalcogenides
- (2015) Amin Azizi et al. ACS Nano
- Large-Area Epitaxial Monolayer MoS2
- (2015) Dumitru Dumcenco et al. ACS Nano
- All Chemical Vapor Deposition Growth of MoS2:h-BN Vertical van der Waals Heterostructures
- (2015) Shanshan Wang et al. ACS Nano
- Strain in epitaxial Bi2Se3 grown on GaN and graphene substrates: A reflection high-energy electron diffraction study
- (2015) Bin Li et al. APPLIED PHYSICS LETTERS
- Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide
- (2015) Miho Arai et al. APPLIED PHYSICS LETTERS
- Monolayer Topological Insulators: Silicene, Germanene, and Stanene
- (2015) Motohiko Ezawa JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN
- Synthesis of Epitaxial Single-Layer MoS2 on Au(111)
- (2015) Signe S. Grønborg et al. LANGMUIR
- Direct Growth of Single- and Few-Layer MoS2 on h-BN with Preferred Relative Rotation Angles
- (2015) Aiming Yan et al. NANO LETTERS
- Direct Observation of Interlayer Hybridization and Dirac Relativistic Carriers in Graphene/MoS2 van der Waals Heterostructures
- (2015) Horacio Coy Diaz et al. NANO LETTERS
- High-quality, large-area MoSe2 and MoSe2/Bi2Se3 heterostructures on AlN(0001)/Si(111) substrates by molecular beam epitaxy
- (2015) E. Xenogiannopoulou et al. Nanoscale
- High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
- (2015) Kibum Kang et al. NATURE
- Molecular-beam epitaxy of monolayer MoSe2: growth characteristics and domain boundary formation
- (2015) L Jiao et al. NEW JOURNAL OF PHYSICS
- Molecular-beam epitaxy of monolayer and bilayer WSe2: a scanning tunneling microscopy/spectroscopy study and deduction of exciton binding energy
- (2015) H J Liu et al. 2D Materials
- Comprehensive structural and optical characterization of MBE grown MoSe2 on graphite, CaF2 and graphene
- (2015) Suresh Vishwanath et al. 2D Materials
- Molecular beam epitaxy of the van der Waals heterostructure MoTe2on MoS2: phase, thermal, and chemical stability
- (2015) Horacio Coy Diaz et al. 2D Materials
- HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
- (2014) Ruoyu Yue et al. ACS Nano
- Direct Chemical Vapor Deposition Growth of WS2 Atomic Layers on Hexagonal Boron Nitride
- (2014) Mitsuhiro Okada et al. ACS Nano
- Field-Effect Transistors Built from All Two-Dimensional Material Components
- (2014) Tania Roy et al. ACS Nano
- An atlas of two-dimensional materials
- (2014) Pere Miró et al. CHEMICAL SOCIETY REVIEWS
- Nanoscale Transition Metal Dichalcogenides: Structures, Properties, and Applications
- (2014) V. Sorkin et al. CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
- Suppressing Twin Domains in Molecular Beam Epitaxy Grown Bi2Te3 Topological Insulator Thin Films
- (2014) Jörn Kampmeier et al. CRYSTAL GROWTH & DESIGN
- Surface Reconstruction-Induced Coincidence Lattice Formation Between Two-Dimensionally Bonded Materials and a Three-Dimensionally Bonded Substrate
- (2014) Jos E. Boschker et al. NANO LETTERS
- Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene
- (2014) Yu-Chuan Lin et al. NANO LETTERS
- Unravelling Orientation Distribution and Merging Behavior of Monolayer MoS2 Domains on Sapphire
- (2014) Qingqing Ji et al. NANO LETTERS
- Two-dimensional semiconductors with possible high room temperature mobility
- (2014) Wenxu Zhang et al. Nano Research
- Commensurate–incommensurate transition in graphene on hexagonal boron nitride
- (2014) C. R. Woods et al. Nature Physics
- Unusual role of epilayer–substrate interactions in determining orientational relations in van der Waals epitaxy
- (2014) Lei Liu et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- Strain state, film and surface morphology of epitaxial topological insulator Bi2Se3 films on Si(111)
- (2014) C. Klein et al. THIN SOLID FILMS
- Suppressing Twin Formation in Bi2Se3Thin Films
- (2014) N. V. Tarakina et al. Advanced Materials Interfaces
- Large-Area Synthesis of Highly Crystalline WSe2 Monolayers and Device Applications
- (2013) Jing-Kai Huang et al. ACS Nano
- Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface
- (2013) Handong Li et al. APPLIED PHYSICS LETTERS
- Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
- (2013) X. Guo et al. APPLIED PHYSICS LETTERS
- Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
- (2013) Yi-Hsien Lee et al. NANO LETTERS
- Van der Waals heterostructures
- (2013) A. K. Geim et al. NATURE
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
- (2013) Arend M. van der Zande et al. NATURE MATERIALS
- Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking
- (2013) Jim Esch PROCEEDINGS OF THE IEEE
- Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy
- (2012) Pascal Gehring et al. NANO LETTERS
- Topological insulator nanostructures for near-infrared transparent flexible electrodes
- (2012) Hailin Peng et al. Nature Chemistry
- Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
- (2012) Qing Hua Wang et al. Nature Nanotechnology
- Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological InsulatorBi2Se3on Epitaxial Graphene/SiC(0001)
- (2012) Y. Liu et al. PHYSICAL REVIEW LETTERS
- Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
- (2011) M. Heyns et al. MRS BULLETIN
- Single-layer MoS2 transistors
- (2011) B. Radisavljevic et al. Nature Nanotechnology
- Formation of epitaxial domains: Unified theory and survey of experimental results
- (2011) Marius Grundmann PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
- On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors
- (2010) Siyuranga O. Koswatta et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- The birth of topological insulators
- (2010) Joel E. Moore NATURE
- Single-crystal germanium layers grown on silicon by nanowire seeding
- (2009) Shu Hu et al. Nature Nanotechnology
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
- (2009) Haijun Zhang et al. Nature Physics
- Epitaxial growth of high-κ oxides on silicon
- (2008) C. Merckling et al. THIN SOLID FILMS
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