Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological InsulatorBi2Se3on Epitaxial Graphene/SiC(0001)
出版年份 2012 全文链接
标题
Spiral Growth without Dislocations: Molecular Beam Epitaxy of the Topological InsulatorBi2Se3on Epitaxial Graphene/SiC(0001)
作者
关键词
-
出版物
PHYSICAL REVIEW LETTERS
Volume 108, Issue 11, Pages -
出版商
American Physical Society (APS)
发表日期
2012-03-15
DOI
10.1103/physrevlett.108.115501
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