4.6 Article

High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2

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APPLIED PHYSICS LETTERS
卷 108, 期 19, 页码 -

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AMER INST PHYSICS
DOI: 10.1063/1.4949559

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  1. National Science Foundation [DMR-1204924]

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Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe2 monolayers on MoS2 substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic wagon wheel pattern with only similar to 2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give the monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe2 and thus determine the band-alignment in the MoTe2/MoS2 interface. Published by AIP Publishing.

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