标题
Molecular beam epitaxy of 2D-layered gallium selenide on GaN substrates
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 121, Issue 9, Pages 094302
出版商
AIP Publishing
发表日期
2017-03-25
DOI
10.1063/1.4977697
参考文献
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