Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Ferroelectric Analog Synaptic Transistors

(2019) Min-Kyu Kim et al.   NANO LETTERS

Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3-Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

(2019) Kyu Hyun Han et al.   ACS Applied Materials & Interfaces

Nitrogen-Induced Enhancement of Synaptic Weight Reliability in Titanium Oxide-Based Resistive Artificial Synapse and Demonstration of the Reliability Effect on the Neuromorphic System

(2019) June Park et al.   ACS Applied Materials & Interfaces

Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

(2019) Seung-Geun Kim et al.   ACS Nano

Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors

(2019) Zheng-Dong Luo et al.   ACS Nano

Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films

(2018) Si Joon Kim et al.   APPLIED PHYSICS LETTERS

Effects of Hf buffer layer at the Y-doped HfO 2 /Si interface on ferroelectric characteristics of Y-doped HfO 2 films formed by reactive sputtering

(2018) Yu Zhang et al.   CERAMICS INTERNATIONAL

NeuroSim: A Circuit-Level Macro Model for Benchmarking Neuro-Inspired Architectures in Online Learning

(2018) Pai-Yu Chen et al.   IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS

MoS₂ Synaptic Transistor With Tunable Weight Profile

(2018) Xuefeng Wang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Ferroelectric hafnium oxide for ferroelectric random-access memories and ferroelectric field-effect transistors

(2018) Thomas Mikolajick et al.   MRS BULLETIN

A semi-floating gate memory based on van der Waals heterostructures for quasi-non-volatile applications

(2018) Chunsen Liu et al.   Nature Nanotechnology

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

(2018) Yaoqiao Hu et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

A ferroelectric field effect transistor based synaptic weight cell

(2018) Matthew Jerry et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

A Robust Artificial Synapse Based on Organic Ferroelectric Polymer

(2018) Bobo Tian et al.   Advanced Electronic Materials

HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications

(2017) Seungyeol Oh et al.   IEEE ELECTRON DEVICE LETTERS

Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors

(2016) Youngseo Park et al.   APPLIED PHYSICS LETTERS

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

(2016) Takahisa Shiraishi et al.   APPLIED PHYSICS LETTERS

TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic Computing

(2016) Jaesung Park et al.   IEEE ELECTRON DEVICE LETTERS

Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories

(2016) Ekaterina Yurchuk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Optoelectrical Molybdenum Disulfide (MoS2)—Ferroelectric Memories

(2015) Alexey Lipatov et al.   ACS Nano

High-Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self-Assembled Monolayer Doping

(2015) Dong-Ho Kang et al.   ADVANCED FUNCTIONAL MATERIALS

Charge trapping at the MoS2-SiO2 interface and its effects on the characteristics of MoS2 metal-oxide-semiconductor field effect transistors

(2015) Yao Guo et al.   APPLIED PHYSICS LETTERS

Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element

(2015) Geoffrey W. Burr et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fully parallel write/read in resistive synaptic array for accelerating on-chip learning

(2015) Ligang Gao et al.   NANOTECHNOLOGY

Scaling behavior of hysteresis in multilayer MoS2 field effect transistors

(2014) Tao Li et al.   APPLIED PHYSICS LETTERS

Grain size engineering for ferroelectric Hf0.5Zr0.5O2 films by an insertion of Al2O3 interlayer

(2014) Han Joon Kim et al.   APPLIED PHYSICS LETTERS

Charge Trapping States at the SiO2–Oligothiophene Monolayer Interface in Field Effect Transistors Studied by Kelvin Probe Force Microscopy

(2013) Yingjie Zhang et al.   ACS Nano

Synaptic electronics: materials, devices and applications

(2013) Duygu Kuzum et al.   NANOTECHNOLOGY

From Bulk to Monolayer MoS2: Evolution of Raman Scattering

(2012) Hong Li et al.   ADVANCED FUNCTIONAL MATERIALS

Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks

(2012) Y. Nishitani et al.   JOURNAL OF APPLIED PHYSICS

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS

Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

(2011) Yukihiro Kaneko et al.   JOURNAL OF APPLIED PHYSICS

Memory window widening of Pt/SrBi2Ta2O9/HfO2/Si ferroelectric-gate field-effect transistors by nitriding Si

(2009) Takeshi Horiuchi et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Electrical Characteristics of Controlled-Polarization-Type Ferroelectric-Gate Field-Effect Transistor

(2008) Tadahiro Fukushima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS