Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb(Zr,Ti)O3 stacked structure

Ultrafast Polarization Switching in Ferroelectric Polymer Thin Films at Extremely High Electric Fields

(2011) Hajime Ishii et al.   Applied Physics Express

A Dual-Channel Ferroelectric-Gate Field-Effect Transistor Enabling nand -Type Memory Characteristics

(2011) Yukihiro Kaneko et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Impedance Analysis of Controlled-Polarization-Type Ferroelectric-Gate Thin Film Transistor Using Resistor–Capacitor Lumped Constant Circuit

(2011) Tadahiro Fukushima et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Actual information storage with a recording density of 4 Tbit/in.2 in a ferroelectric recording medium

(2010) Kenkou Tanaka et al.   APPLIED PHYSICS LETTERS

NOR-Type Nonvolatile Ferroelectric-Gate Memory Cell Using Composite Oxide Technology

(2009) Yukihiro Kaneko et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Composition-dependent polarization switching behaviors of (111)-preferred polycrystalline Pb(Zr[sub x]Ti[sub 1−x])O[sub 3] thin films

(2008) J. Y. Jo et al.   APPLIED PHYSICS LETTERS

Current status of ferroelectric-gate Si transistors and challenge to ferroelectric-gate CNT transistors

(2008) Hiroshi Ishiwara   CURRENT APPLIED PHYSICS

A Ferroelectric Gate Field Effect Transistor with a ZnO/Pb(Zr,Ti)O3Heterostructure Formed on a Silicon Substrate

(2008) Hiroyuki Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Scanning Nonlinear Dielectric Microscopy Nano-Science and Technology for Next Generation High Density Ferroelectric Data Storage

(2008) Kenkou Tanaka et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

(2008) Yoshihisa Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS