Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors
出版年份 2016 全文链接
标题
Thermally activated trap charges responsible for hysteresis in multilayer MoS2 field-effect transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 108, Issue 8, Pages 083102
出版商
AIP Publishing
发表日期
2016-02-23
DOI
10.1063/1.4942406
参考文献
相关参考文献
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