Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition

Physical chemistry of the TiN/Hf0.5Zr0.5O2 interface

(2020) W. Hamouda et al.   JOURNAL OF APPLIED PHYSICS

Depletion induced depolarization field in Hf1−xZrxO2 metal-ferroelectric-semiconductor capacitors on germanium

(2020) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

The Past, the Present, and the Future of Ferroelectric Memories

(2020) T. Mikolajick et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Enhanced ferroelectricity in ultrathin films grown directly on silicon

(2020) Suraj S. Cheema et al.   NATURE

Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application

(2020) Fei Mo et al.   Applied Physics Express

Very large remanent polarization in ferroelectric Hf1-xZrxO2 grown on Ge substrates by plasma assisted atomic oxygen deposition

(2019) C. Zacharaki et al.   APPLIED PHYSICS LETTERS

Ferroelectric imprint and polarization in the amorphous phase in P(VDF-TrFE)

(2019) Christian Peter et al.   JOURNAL OF APPLIED PHYSICS

Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO2 Oxide

(2019) Daewoong Kwon et al.   IEEE ELECTRON DEVICE LETTERS

Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors

(2019) Pratyush Buragohain et al.   ACS Applied Materials & Interfaces

Enhanced Reliability of Ferroelectric HfZrO x on Semiconductor by Using Epitaxial SiGe as Substrate

(2019) Kuen-Yi Chen et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf 0.5 Zr 0.5 O 2 Capacitors

(2019) Furqan Mehmood et al.   Advanced Materials Interfaces

Ferroelectric Tunnel Junctions: Modulations on the Potential Barrier

(2019) Zheng Wen et al.   ADVANCED MATERIALS

Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx

(2018) Jing Li et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

On the relationship between field cycling and imprint in ferroelectric Hf0.5Zr0.5O2

(2018) F. P. G. Fengler et al.   JOURNAL OF APPLIED PHYSICS

The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2

(2018) Youngin Goh et al.   NANOTECHNOLOGY

Review and perspective on ferroelectric HfO2-based thin films for memory applications

(2018) Min Hyuk Park et al.   MRS Communications

Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique

(2018) Éamon O’Connor et al.   APL Materials

Reliability Study of Ferroelectric Al:HfO2 Thin Films for DRAM and NAND Applications

(2017) Karine Florent et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Domain Pinning: Comparison of Hafnia and PZT Based Ferroelectrics

(2017) Franz P. G. Fengler et al.   Advanced Electronic Materials

Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors

(2016) Milan Pešić et al.   ADVANCED FUNCTIONAL MATERIALS

Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide

(2016) S. Starschich et al.   APPLIED PHYSICS LETTERS

Structural Changes Underlying Field-Cycling Phenomena in Ferroelectric HfO2Thin Films

(2016) Everett D. Grimley et al.   Advanced Electronic Materials

Complex Internal Bias Fields in Ferroelectric Hafnium Oxide

(2015) Tony Schenk et al.   ACS Applied Materials & Interfaces

Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

(2015) Patrick D. Lomenzo et al.   IEEE ELECTRON DEVICE LETTERS

A Review on Conduction Mechanisms in Dielectric Films

(2014) Fu-Chien Chiu   Advances in Materials Science and Engineering

Ferroelectricity in hafnium oxide thin films

(2011) T. S. Böscke et al.   APPLIED PHYSICS LETTERS