Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx

标题
Negative Capacitance Ge PFETs for Performance Improvement: Impact of Thickness of HfZrOx
作者
关键词
-
出版物
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 65, Issue 3, Pages 1217-1222
出版商
Institute of Electrical and Electronics Engineers (IEEE)
发表日期
2018-01-24
DOI
10.1109/ted.2018.2791420

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