Ferroelectric Si-Doped HfO2 Device Properties on Highly Doped Germanium

标题

作者

关键词

出版物

Volume 36, Issue 8, Pages 766-768

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2015-06-16

DOI

10.1109/led.2015.2445352

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now