Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
出版年份 2018 全文链接
标题
Stabilization of ferroelectric HfxZr1−xO2 films using a millisecond flash lamp annealing technique
作者
关键词
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出版物
APL Materials
Volume 6, Issue 12, Pages 121103
出版商
AIP Publishing
发表日期
2018-12-11
DOI
10.1063/1.5060676
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Ferroelectricity in Hf0.5Zr0.5O2 Thin Films: A Microscopic Study of the Polarization Switching Phenomenon and Field-Induced Phase Transformations
- (2018) Anastasia Chouprik et al. ACS Applied Materials & Interfaces
- Physical Mechanisms behind the Field-Cycling Behavior of HfO2 -Based Ferroelectric Capacitors
- (2016) Milan Pešić et al. ADVANCED FUNCTIONAL MATERIALS
- Evidence for oxygen vacancies movement during wake-up in ferroelectric hafnium oxide
- (2016) S. Starschich et al. APPLIED PHYSICS LETTERS
- A study on the wake-up effect of ferroelectric Hf0.5Zr0.5O2films by pulse-switching measurement
- (2016) Han Joon Kim et al. Nanoscale
- Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films
- (2015) Min Hyuk Park et al. ADVANCED MATERIALS
- Study on the size effect in Hf0.5Zr0.5O2 films thinner than 8 nm before and after wake-up field cycling
- (2015) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Ferroelectricity in undoped hafnium oxide
- (2015) Patrick Polakowski et al. APPLIED PHYSICS LETTERS
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
- (2015) Patrick D. Lomenzo et al. JOURNAL OF APPLIED PHYSICS
- Optical Properties and Plasmonic Performance of Titanium Nitride
- (2015) Panos Patsalas et al. Materials
- Ferroelectric Hafnium Oxide Based Materials and Devices: Assessment of Current Status and Future Prospects
- (2015) J. Muller et al. ECS Journal of Solid State Science and Technology
- Electric Field Cycling Behavior of Ferroelectric Hafnium Oxide
- (2014) Tony Schenk et al. ACS Applied Materials & Interfaces
- Impact of different dopants on the switching properties of ferroelectric hafniumoxide
- (2014) Uwe Schroeder et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
- (2013) Dayu Zhou et al. APPLIED PHYSICS LETTERS
- Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature
- (2013) Min Hyuk Park et al. APPLIED PHYSICS LETTERS
- Electrical and optical properties of TiN thin films
- (2013) M. N. Solovan et al. INORGANIC MATERIALS
- Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
- (2012) T. Olsen et al. APPLIED PHYSICS LETTERS
- Reliability Characteristics of Ferroelectric $ \hbox{Si:HfO}_{2}$ Thin Films for Memory Applications
- (2012) Stefan Mueller et al. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
- Ferroelectricity in Simple Binary ZrO2 and HfO2
- (2012) Johannes Müller et al. NANO LETTERS
- Ferroelectricity in Gd-Doped HfO2Thin Films
- (2012) S. Mueller et al. ECS Journal of Solid State Science and Technology
- Ferroelectricity in hafnium oxide thin films
- (2011) T. S. Böscke et al. APPLIED PHYSICS LETTERS
- Ferroelectric Zr0.5Hf0.5O2thin films for nonvolatile memory applications
- (2011) J. Müller et al. APPLIED PHYSICS LETTERS
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