Hafnium carbide formation in oxygen deficient hafnium oxide thin films

Towards forming-free resistive switching in oxygen engineered HfO2−x

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

Thickness independent reduced forming voltage in oxygen engineered HfO2 based resistive switching memories

(2014) S. U. Sharath et al.   APPLIED PHYSICS LETTERS

In-operando hard X-ray photoelectron spectroscopy study on the impact of current compliance and switching cycles on oxygen and carbon defects in resistive switching Ti/HfO2/TiN cells

(2014) Malgorzata Sowinska et al.   JOURNAL OF APPLIED PHYSICS

Carbothermal Transformation of TiO2 into TiOxCy in UHV: Tracking Intrinsic Chemical Stabilities

(2014) Laura Calvillo et al.   Journal of Physical Chemistry C

Prediction of stable hafnium carbides: Stoichiometries, mechanical properties, and electronic structure

(2014) Qingfeng Zeng et al.   PHYSICAL REVIEW B

Cluster-like resistive switching of SrTiO3:Nb surface layers

(2013) C Rodenbücher et al.   NEW JOURNAL OF PHYSICS

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

(2012) M. Lanza et al.   APPLIED PHYSICS LETTERS

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO2±x

(2012) Erwin Hildebrandt et al.   JOURNAL OF APPLIED PHYSICS

Evaluation of the local temperature of conductive filaments in resistive switching materials

(2012) E Yalon et al.   NANOTECHNOLOGY

Controlled oxygen vacancy induced p-type conductivity in HfO2−x thin films

(2011) Erwin Hildebrandt et al.   APPLIED PHYSICS LETTERS

Material and process optimization of correlated electron random access memories

(2011) Jolanta Celinska et al.   JOURNAL OF APPLIED PHYSICS

Development of hafnium based high-k materials—A review

(2011) J.H. Choi et al.   MATERIALS SCIENCE & ENGINEERING R-REPORTS

Grain boundary-driven leakage path formation in HfO2 dielectrics

(2011) G. Bersuker et al.   SOLID-STATE ELECTRONICS

Resistance switching in HfO2 metal-insulator-metal devices

(2010) P. Gonon et al.   JOURNAL OF APPLIED PHYSICS

Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges

(2009) Rainer Waser et al.   ADVANCED MATERIALS

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of cubic HfxTa1–xCy carbides from X-ray spectroscopy studies and cluster self-consistent calculations

(2007) A.A. Lavrentyev et al.   JOURNAL OF ALLOYS AND COMPOUNDS