Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

Engineering the (In, Al, Ga)N back-barrier to achieve high channel-conductivity for extremely scaled channel-thicknesses in N-polar GaN high-electron-mobility-transistors

(2014) Jing Lu et al.   APPLIED PHYSICS LETTERS

Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment

(2014) Elaheh Ahmadi et al.   JOURNAL OF APPLIED PHYSICS

Theoretical analysis of high-field transport in graphene on a substrate

(2014) Andrey Y. Serov et al.   JOURNAL OF APPLIED PHYSICS

Terahertz Frequency-Dependent Carrier Scattering Rate and Mobility of Monolayer and AA-Stacked Multilayer Graphene

(2013) I-Tan Lin et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Polarization-induced remote interfacial charge scattering in Al2O3/AlGaN/GaN double heterojunction high electron mobility transistors

(2012) Dong Ji et al.   APPLIED PHYSICS LETTERS

Interface roughness scattering in ultra-thin N-polar GaN quantum well channels

(2012) Uttam Singisetti et al.   APPLIED PHYSICS LETTERS

Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With $f_{T}$ of 275 GHz

(2012) Nidhi et al.   IEEE ELECTRON DEVICE LETTERS

Tri-Gate Normally-Off GaN Power MISFET

(2012) Bin Lu et al.   IEEE ELECTRON DEVICE LETTERS

InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

(2012) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS

Electric field-induced scatterings in rough quantum wells of AlGaN/GaN high-mobility electronic transistors

(2012) Dong Ji et al.   JOURNAL OF APPLIED PHYSICS

Theory of interfacial plasmon-phonon scattering in supported graphene

(2012) Zhun-Yong Ong et al.   PHYSICAL REVIEW B

Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

(2011) Ting-Hsiang Hung et al.   APPLIED PHYSICS LETTERS

Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $g_{m}$, and 0.66-$\Omega\cdot \hbox{mm}$$R_{\rm on}$

(2011) Uttam Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

Polarization-mediated remote surface roughness scattering in ultrathin barrier GaN high-electron mobility transistors

(2010) Yu Cao et al.   APPLIED PHYSICS LETTERS

Rigorous calculation of the Seebeck coefficient and mobility of thermoelectric materials

(2010) Ashok T. Ramu et al.   JOURNAL OF APPLIED PHYSICS

Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics

(2010) T. P. O’Regan et al.   JOURNAL OF APPLIED PHYSICS

Effect of high-κgate dielectrics on charge transport in graphene-based field effect transistors

(2010) Aniruddha Konar et al.   PHYSICAL REVIEW B

Electron mobility in N-polar GaN/AlGaN/GaN heterostructuress

(2008) David F. Brown et al.   APPLIED PHYSICS LETTERS

Substrate-limited electron dynamics in graphene

(2008) S. Fratini et al.   PHYSICAL REVIEW B