Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering

标题
Positive threshold voltage shift in AlGaN/GaN HEMTs with p-type NiO gate synthesized by magnetron reactive sputtering
作者
关键词
-
出版物
APPLIED SURFACE SCIENCE
Volume 462, Issue -, Pages 799-803
出版商
Elsevier BV
发表日期
2018-08-18
DOI
10.1016/j.apsusc.2018.08.135

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