期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 3, 页码 381-383出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2013.2240372
关键词
Fin-shaped field-effect transistor (FinFET); GaN; HEMT; heterojunction; MOSFET; nanochannel; subthreshold slope (SS); triple-gate; 2-D electron gas (2DEG)
资金
- Kyungpook National University
- Brain Korea 21
- Korean Ministry of Education, Science and Technology (MEST) under National Research Foundation of Korea (NRF) [2012-0005671, 2012-0000627]
- MKE/KETEP [2011101050017B]
- World Class University program through the Korea Science and Engineering Foundation
- MEST [R33-10055]
- IT R&D program of MKE/KEIT [10038766]
- National Research Foundation of Korea [2008-0062617, R33-2012-000-10055-0, 2011-0016222] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Heavily doped GaN nanochannel fin-shaped field-effect transistors (FinFETs) without heterojunction have been fabricated and characterized for the first time. Simplified pragmatical technology for GaN epitaxial growth and FinFET process was used to achieve nanodevices with a channel width from 40 to 100 nm and a gate length of 1 mu m. They exhibit excellent ON-state performance, such as maximum drain current of 670 mA/mm andmaximum transconductance of 168 mS/mm. Record OFF-state performance was measured: extremely low leakage current of similar to 10(-11) mA and source-drain breakdown voltage of similar to 280 V. The subthreshold slope of 68 mV/decade is close to the theoretical limit (60 mV/decade, so far achieved only in SOI MOSFETs) and leads to very high I-on/I-off ratio of 10(8)-10(9). The proposed heterojunction-free nanochannel GaN FinFET is a very promising candidate not only for high-performance and high-speed integrated circuits but also for high-power applications.
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