期刊
IEEE ELECTRON DEVICE LETTERS
卷 38, 期 10, 页码 1445-1448出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2017.2747843
关键词
AlGaN/GaN; fin-shaped field-effect transistor (FinFET); heterojunction; high-electron mobility transistor (HEMT); GaN; self-aligned FET
资金
- HRL Laboratories LLC
We have demonstrated highly scaled, self-aligned AlGaN/GaN fin-shaped field-effect transistors (FinFETs), which were fabricated using e-beam lithography and a regrown n+ GaN ohmic process with a sacrificial dummy gate. Our devices were very aggressively scaled, with fin widths, gate length, and source drain spacing as small as 50, 60, and 200nm, respectively. DC characteristics, when normalized to active device periphery (number of fins times fin width), showed peak transconductance of 1.5 mS/mu m and ON resistance of 390 Omega-mu m. Enhancement mode device operation was observed for fin widths below 100 nm.
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