High Quality, Mass‐Producible Semipolar GaN and InGaN Light‐Emitting Diodes Grown on Sapphire

Elimination of Stacking Faults in Semipolar GaN and Light-Emitting Diodes Grown on Sapphire

(2019) Jie Song et al.   ACS Applied Materials & Interfaces

Improved semipolar green InGaN/GaN quantum wells on asymmetrically grown (112̄2) GaN templates and their correlations

(2018) Zhengyuan Wu et al.   CRYSTENGCOMM

Semipolar III–nitride light-emitting diodes with negligible efficiency droop up to ∼1 W

(2016) Sang Ho Oh et al.   Applied Physics Express

High-power blue laser diodes with indium tin oxide cladding on semipolar (202¯1¯) GaN substrates

(2015) A. Pourhashemi et al.   APPLIED PHYSICS LETTERS

Successive selective growth of semipolar (11-22) GaN on patterned sapphire substrate

(2015) Florian Tendille et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Semipolar (20 2¯1) GaN and InGaN quantum wells on sapphire substrates

(2014) Benjamin Leung et al.   APPLIED PHYSICS LETTERS

Defect reduction method in (11-22) semipolar GaN grown on patterned sapphire substrate by MOCVD: Toward heteroepitaxial semipolar GaN free of basal stacking faults

(2014) Florian Tendille et al.   JOURNAL OF CRYSTAL GROWTH

Green Semipolar (202̄1̄) InGaN Light-Emitting Diodes with Small Wavelength Shift and Narrow Spectral Linewidth

(2013) Yuji Zhao et al.   Applied Physics Express

Pulsed high-power AlGaN-cladding-free blue laser diodes on semipolar (202¯1¯) GaN substrates

(2013) A. Pourhashemi et al.   APPLIED PHYSICS LETTERS

Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes

(2013) Matthew T. Hardy et al.   APPLIED PHYSICS LETTERS

High-Power, Low-Efficiency-Droop Semipolar ($20\bar{2}\bar{1}$) Single-Quantum-Well Blue Light-Emitting Diodes

(2012) Chih-Chien Pan et al.   Applied Physics Express

High-Power (over 100 mW) Green Laser Diodes on Semipolar $\{20\bar{2}1\}$ GaN Substrates Operating at Wavelengths beyond 530 nm

(2012) Shimpei Takagi et al.   Applied Physics Express

Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells

(2012) Yuji Zhao et al.   APPLIED PHYSICS LETTERS

Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy

(2012) David A. Browne et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Indium incorporation and emission wavelength of polar, nonpolar and semipolar InGaN quantum wells

(2012) Tim Wernicke et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

(2012) R M Farrell et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

(2011) Narihito Okada et al.   APPLIED PHYSICS LETTERS

High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes

(2011) R. M. Farrell et al.   APPLIED PHYSICS LETTERS

Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

(2011) Benjamin Leung et al.   JOURNAL OF CRYSTAL GROWTH

InGaN/GaN Blue Laser Diode Grown on Semipolar (30\bar31) Free-Standing GaN Substrates

(2010) Po Shan Hsu et al.   Applied Physics Express

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

(2010) Yuji Zhao et al.   Applied Physics Express

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate

(2009) Narihito Okada et al.   Applied Physics Express

AlGaN-Cladding Free Green Semipolar GaN Based Laser Diode with a Lasing Wavelength of 506.4 nm

(2009) Anurag Tyagi et al.   Applied Physics Express

Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

(2009) Hisashi Masui et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison between Polar (0001) and Semipolar (11\bar22) Nitride Blue–Green Light-Emitting Diodes Grown onc- andm-Plane Sapphire Substrates

(2009) Philippe De Mierry et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Morphological and microstructural evolution in the two-step growth of nonpolar a-plane GaN on r-plane sapphire

(2009) Qian Sun et al.   JOURNAL OF APPLIED PHYSICS