标题
Semipolar (20 2¯1) GaN and InGaN quantum wells on sapphire substrates
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 104, Issue 26, Pages 262105
出版商
AIP Publishing
发表日期
2014-07-03
DOI
10.1063/1.4886578
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Characterization of structural defects in semipolar $\{ 20\bar{2}1\} $ GaN layers grown on $\{ 22\bar{4}3\} $ patterned sapphire substrates
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