High-quality {20-21} GaN layers on patterned sapphire substrate with wide-terrace

High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

(2011) Yuji Zhao et al.   Applied Physics Express

Weak Carrier/Exciton Localization in InGaN Quantum Wells for Green Laser Diodes Fabricated on Semi-Polar {20\bar21} GaN Substrates

(2010) Mitsuru Funato et al.   Applied Physics Express

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2010) Takashi Kyono et al.   Applied Physics Express

Planar semipolar (101¯1) GaN on (112¯3) sapphire

(2010) Stephan Schwaiger et al.   APPLIED PHYSICS LETTERS

White light emitting diodes with super-high luminous efficacy

(2010) Yukio Narukawa et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Continuous-Wave Operation of 520 nm Green InGaN-Based Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2009) Yusuke Yoshizumi et al.   Applied Physics Express

Growth of Semipolar (11\bar22) GaN Layer by Controlling Anisotropic Growth Rates inr-Plane Patterned Sapphire Substrate

(2009) Narihito Okada et al.   Applied Physics Express

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express

Direct Growth ofm-plane GaN with Epitaxial Lateral Overgrowth fromc-plane Sidewall ofa-plane Sapphire

(2008) Narihito Okada et al.   Applied Physics Express

M-plane GaN grown on m-sapphire by metalorganic vapor phase epitaxy

(2008) R. Armitage et al.   APPLIED PHYSICS LETTERS