30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

标题
30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique
作者
关键词
-
出版物
Applied Physics Express
Volume 3, Issue 10, Pages 102101
出版商
IOP Publishing
发表日期
2010-09-17
DOI
10.1143/apex.3.102101

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