Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
出版年份 2012 全文链接
标题
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 100, Issue 20, Pages 201108
出版商
AIP Publishing
发表日期
2012-05-17
DOI
10.1063/1.4719100
参考文献
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- Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
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- Critical Thickness for Onset of Plastic Relaxation in (11\bar22) and (20\bar21) Semipolar AlGaN Heterostructures
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- (2009) Yohei Enya et al. Applied Physics Express
- Characterization of blue-green m-plane InGaN light emitting diodes
- (2009) You-Da Lin et al. APPLIED PHYSICS LETTERS
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- (2009) Kuniyoshi Okamoto et al. APPLIED PHYSICS LETTERS
- GaN and InGaN(112̱2) surfaces: Group-III adlayers and indium incorporation
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- LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
- (2009) M.H. Crawford IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
- Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
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