Growth evolution and microstructural characterization of semipolar (112̄2) GaN selectively grown on etched r-plane sapphire

出版年份 2011 全文链接

标题

作者

关键词

出版物

Volume 341, Issue 1, Pages 27-33

出版商

Elsevier BV

发表日期

2011-12-23

DOI

10.1016/j.jcrysgro.2011.12.035

Explore over 38,000 international journals covering a vast array of academic fields.

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now